Silicon Drift Detectors (SDD) have emerged as a critical technology in the field of radiation detection, offering superior performance compared to traditional semiconductor detectors. An SDD detector functions by collecting charge carriers generated by incident radiation and guiding them through an electric field to a small readout electrode. This innovative approach minimizes capacitance and noise, resulting in high fidelity signal acquisition. As a result, silicon drift technology is widely used in applications ranging from X-ray spectroscopy to particle physics and environmental monitoring. In this article, we explore the advancements made by Nuchip Photoelectric Technology Shan Dong Co., Ltd. in the development of an enhanced silicon drift detector that sets new benchmarks for energy resolution and design innovation.

One of the major factors influencing the performance of an SDD detector is the junction capacitance. Lowering junction capacitance is essential to reduce electronic noise, thereby improving the overall energy resolution of the detector. Nuchip Photoelectric Technology has successfully implemented design strategies such as double-sided p+ contacts combined with a minimal n+ readout electrode. This approach effectively reduces junction capacitance, allowing the detector to achieve an energy resolution close to the intrinsic limit of silicon. The reduction in capacitance not only improves signal clarity but also enhances the detector’s reliability and stability across various operating conditions, making these silicon drift detectors highly suitable for precision scientific measurements.

The design of the silicon drift detector plays a vital role in optimizing performance parameters. Nuchip’s team has mastered the design and process technology behind the SDD and introduced a unique concentric circle structure known as the SDD (PA150). This structure efficiently channels charge carriers towards the readout electrode, minimizing charge loss and further reducing noise. The concentric circle layout ensures uniform electric fields and enhanced charge collection efficiency, which directly contribute to the detector’s outstanding energy resolution. This innovation distinguishes Nuchip’s SDD from conventional linear or segmented detector designs, placing it at an advanced level on the international stage. Moreover, this design supports compactness and integration flexibility, offering advantages for various industrial implementations.

Energy resolution is a critical metric for evaluating the performance of a radiation detector. Nuchip Photoelectric Technology’s SDD achieves an impressive energy resolution of FWHM 135 eV at 5.9 keV, a remarkable feat that approaches the intrinsic limits of silicon. This level of resolution is made possible through the synergy of low-noise readout electronics and the optimized SDD design that minimizes junction capacitance. The high energy resolution enables precise identification of spectral lines, which is essential in applications such as material analysis, semiconductor inspection, and X-ray fluorescence spectroscopy. This achievement positions Nuchip’s silicon drift detector on par with, or exceeding, comparable international technologies, underscoring the company’s leadership in detector innovation.

When benchmarked against global counterparts, Nuchip’s SDD demonstrates competitive advantages in both design and performance. The concentric circle SDD (PA150) with its double-sided p+ contacts and minimal n+ readout electrode is a result of cutting-edge process technology that few international manufacturers currently match. The system’s energy resolution of 135 eV FWHM at 5.9 keV is at the forefront of what is achievable with silicon detectors, matching or surpassing standards set by leading international brands. By maintaining strict quality control and continuous R&D investment, Nuchip ensures that their silicon drift detectors remain reliable, efficient, and suitable for demanding applications worldwide. Their product portfolio can be explored in more detail at their PRODUCTS page.

Silicon drift detectors are versatile tools used across many industries due to their high energy resolution and low noise characteristics. Nuchip’s enhanced SDDs find applications in medical imaging, environmental monitoring, semiconductor quality control, and scientific research. In medical diagnostics, they contribute to more accurate X-ray and gamma-ray imaging. Environmental agencies use SDD detectors to detect trace levels of radioactive contamination and pollutants. In semiconductor manufacturing, the precise elemental analysis provided by SDDs ensures product reliability and performance. The advanced design and performance of Nuchip’s SDD detectors facilitate their integration into cutting-edge instrumentation, supporting sectors such as aerospace and material science. Additional information about the company’s mission and technological capabilities is available on their ABOUT US page.

The advancements made by Nuchip Photoelectric Technology Shan Dong Co., Ltd. in silicon drift detector technology represent a significant leap forward in detector design and performance. Through innovative design choices like the concentric circle structure and reduction of junction capacitance, Nuchip has developed an SDD with exceptional energy resolution that stands at the forefront of international standards. Their continued commitment to quality and technological excellence positions them as a key player in the global radiation detection market. As industries demand more precise and reliable detection solutions, the enhanced silicon drift detector by Nuchip is poised to meet and exceed those needs. For inquiries or support, customers can visit the CONTACT US page to connect with the company’s expert team.