Silicon Drift Detector

Using double-sided p+ contacts and a minimal n+ readout

electrode to effectively reduce junction capacitance. Achieves

extremely high energy resolution which, when coupled with low-

noise readout electronics, approaches the intrinsic limit of silicon.

Our team has mastered the design and process technology of SDD and developed a concentric circle structure

SDD(PA150). The system energy resolution reaches FWHM 135eV@5.9keV, reaching the advanced level of

international counterparts.